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TISP4A250H3BJ ASYMMETRICAL-BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTOR
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TISP4A250H3BJ Overvoltage Protector
RING Line Protection for: -- LCAS (Line Card Access Switch) such as Le75181, Le75183 and Le75282 Voltages Optimized for: -- Battery-Backed Ringing Circuits Maximum Ringing a.c..................................................104 Vrms Maximum Battery Voltage ................................................. -52 V
VDRM V +100 -200 V(BO) V +125 -250
SMB Package (Top View)
(Ground) 1
2 (Ring)
Terminal typical application names shown in parenthesis
MD-SMB-006-a
Device Name TISP4A250H3BJ
Device Symbol
(Ring)
Rated for International Surge Wave Shapes
Wave Shape 2/10 8/20 10/160 10/700 10/560 10/1000 Standard GR-1089-CORE IEC 61000-4-5 TIA-968-A ITU-T K.20/21/45 TIA-968-A GR-1089-CORE IPPSM A 500 300 250 200 160 100
SD-TISP4A-001-a
(Ground)
..........................................UL Recognized Component
How To Order
Device TISP4A250H3BJ Package SMB Carrier Embossed Tape Reeled Order As TISP4A250H3BJR-S Marking Code 4A250H Standard Quantity 3000
Description The TISP4A250H3BJ is an asymmetrical bidirectional overvoltage protector. It is designed to limit the peak voltages on the Ring line terminal of the LCAS (Line Card Access Switch) such as Le75181, Le75183 and Le75282. The TISP4A250H3BJ must be connected with bar-indexed terminal 1 to the protective Ground, and terminal 2 to the Ring conductor. The TISP4A250H3BJ voltages are chosen to give adequate LCAS ring line terminal protection for all switch conditions. The most potentially stressful condition is low level power cross when the LCAS switches are closed. Under this condition, the TISP4A250H3BJ limits the voltage and corresponding LCAS dissipation until the LCAS thermal trip operates and opens the switches. Under open-circuit ringing conditions, the line Ring conductor will have high peak voltages. For battery backed ringing, the Ring conductor will have a larger peak negative voltage than positive, i.e. the peak voltages are asymmetric. The TISP4A250H3BJ has a similar voltage asymmetry and will allow the maximum possible ringing voltage, while giving the most effective protection. On a connected line, the Tip conductor will have much smaller voltage levels than the open-circuit Ring conductor values. Here a TISP4xxxH3BJ series symmetrical voltage protector gives adequate protection. Overvoltages are initially clipped by breakdown clamping. If sufficient current is available from the overvoltage, the breakdown voltage will rise to the breakover level, which causes the device to switch into a low-voltage on-state condition. This switching action removes the high voltage stress from the following circuitry and causes the current resulting from the overvoltage to be safely diverted through the protector. The high holding (switch off) current prevents d.c. latchup as the diverted current subsides.
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex NOVEMBER 2006 - REVISED MAY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP4A250H3BJ Overvoltage Protector
Absolute Maximum Ratings, TA = 25 C (Unless Otherwise Noted)
Rating Rep et it ive p eak off- st at e volt age (see Not e 1) Non-repetitive peak impulse current (see Notes 2 and 3) 2/10 s (GR-1089-CORE, 2/10 s voltage wave shape) 8/20 s (IEC 61000-4-5, 1.2/50 s voltage, 8/20 s current combination wave generator) 10/160 s (TIA-968-A, 10/160 s voltage wave shape) 5/310 s (ITU-T K.44, 10/700 s voltage wave shape used in K.20/21/45) 5/320 s (TIA-968-A, 9/720 s voltage wave shape) 10/560 s (TIA-968-A, 10/560 s voltage wave shape) 10/1000 s (GR-1089-CORE, 10/1000 s voltage wave shape) Non-repetitive peak on-state current (see Notes 2, 3 and 4) 20 ms, 50 Hz (full sine wave) 16.7 ms, 60 Hz (full sine wave) 1000 s, 50 Hz or 60 Hz a.c. Initial rate of rise of on-state currrent, exponential current ramp. Maximum ramp value < 200 A Junction temperature Storage temperature range NOTES: 1. 2. 3. 4. ITSM di T /dt TJ Tstg 55 60 2.2 400 -40 to +150 -65 to +150 A A/s C C 500 300 250 200 200 160 100 Symbol VDRM Value +100 -200 Unit V
IPPSM
A
See Figure 6 for voltages at other temperatures. Initially the device must be in thermal equilibrium with TJ = 25 C. The surge may be repeated after the device returns to its initial conditions. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring track widths. See Figure 5 for the current ratings at other durations. Derate current values at -0.61 %/C for ambient temperatures above 25 C.
Overload Ratings, TA = 25 C (Unless Otherwise Noted)
Rating Maximum overload on-state current without open circuit, 50 Hz or 60 Hz a.c. (see note 5) 0.03 s 0.07 s 1.6 s 5.0 s 1000 s NOTE: Symbol Value 60 40 8 7 2.2 Unit
IT(OV)M
A rms
5. Peak overload on-state current during a.c. power cross tests of GR-1089-CORE and UL 1950/60950. These electrical stress levels may damage the TISP4A250H3BJ silicon die. After test, the pass criterion is either that the device is functional or, if it is faulty, that it has a short-circuit fault mode. In the short-circuit fault mode, the following equipment is protected as the device is a permanent short across the line. The equipment would be unprotected if an open-circuit fault mode developed.
NOVEMBER 2006 - REVISED MAY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP4A250H3BJ Overvoltage Protector
Electrical Characteristics, TA = 25 C (Unless Otherwise Noted)
Parameter IDRM V(BO) I(BO) VT IH dv/dt CO Repetitive peak off-state current Breakover voltage Breakover current On-state voltage Holding current Critical rate of rise of off-state voltage Off-state capacitance V D = VDRM dv/dt = 250 V/ms, R SOURCE = 300 dv/dt = 250 V/ms, R SOURCE = 300 I T = 5 A, t w = 100 s I T = 5 A, d i/ d t = 30 mA/ ms Linear voltage ramp Maximum ramp value < 0.85V DRM f = 1 MHz, V d = 1 V rms VD = 2 V 15 0 5 72 150 Test Conditions TA = 25 C TA = 85 C M in Typ M ax 5 10 +125 -250 600 3 600 Unit A V mA V mA kV/s pF
Thermal Characteristics, TA = 25 C (Unless Otherwise Noted)
Parameter Test Conditions EIA/JESD51-3 PCB, IT = ITSM(1000) (see Note 6) 265 mm x 210 mm populated line card, 4-layer PCB, IT = ITSM(1000) NOTE: 50 M in Typ M ax 113 C/W Unit
R
JA
Junction to ambien t thermal resistance
6. EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
NOVEMBER 2006 - REVISED MAY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP4A250H3BJ Overvoltage Protector
Parameter Measurement Information
+i I PPSM Quadrant I Switching Characteristic
ITSM ITRM IT VT IH V(BR)M -v I(BR) V(BR) I(BO) VDRM IDRM IH VD ID ID VD VDRM V(BR)M I DRM
V(BO)
I(BO) V(BR) I(BR) +v
V(BO)
VT IT ITRM
Quadrant III Switching Characteristic -i
ITSM
I PPSM
PM-TISP4Axxx-002-a
Figure 1. Voltage-Current Characterist ic for the Ring and Ground Terminals All Measurements are Referenced to the Ground Terminal
NOVEMBER 2006 - REVISED MAY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP4A250H3BJ Overvoltage Protector
Typical Characteristics
OFF-STATE CURRENT vs JUNCTION TEMPERATURE
100 VD = 50 V
TCHAG
1.10
NORMALIZED BREAKOVER VOLTAGE vs JUNCTION TEMPERATURE TC4HAF
Normalized Breakover Voltage
-25 0 25 50 75 100 125 TJ - Junction Temperature - C 150
10 |ID| - Off-State Current - A
1.05
1
0*1
1.00
0*01
0*001
0.95 -25 0 25 50 75 100 125 TJ - Junction Temperature - C 150
Figure 2.
Figure 3.
2.0
NORMALIZED HOLDING CURRENT vs JUNCTION TEMPERATURE TC4HAD
1.5 Normalized Holding Current
1.0 0.9 0.8 0.7 0.6 0.5 0.4 -25 0 25 50 75 100 125 TJ - Junction Temperature - C 150
Figure 4.
NOVEMBER 2006 - REVISED MAY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP4A250H3BJ Overvoltage Protector
Rating and Thermal Information
NON-REPETITIVE PEAK ON-STATE CURRENT vs CURRENT DURATION
ITSM(t) - Non-Repetitive Peak On-State Current - A 30 VGEN = 600 Vrms, 50/60 Hz 20 15 10 9 8 7 6 5 4 3
0.94
TI4HAC
VDRM DERATING FACTOR vs MINIMUM AMBIENT TEMPERATURE
1.00 0.99
TI4HADC
RGEN = 1.4*VGEN/ITSM(t) EIA/JESD51-2 ENVIRONMENT EIA/JESD51-3 PCB TA = 25 C
Derating Factor
0.98
0.97
0.96
0.95
2 1.5 0*1 1 10 100 1000
0.93 -40 -35 -30 -25 -20 -15 -10 -5
0
5
10 15 20 25
t - Current Duration - s
TAMIN - Minimum Ambient Temperature - C
Figure 5.
Figure 6.
NOVEMBER 2006 - REVISED MAY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP4A250H3BJ Overvoltage Protector
Applications Information
VDD ATEST1
ARINGING1 SW SW SW
Tip1
B1250T TelefuseTM
Tip
ALINE 1
TISP4125H3BJ
ASLIC1
Ground Ground
FGND1
TISP4A250H3BJ
Ring
Ring1
B1250T TelefuseTM
BLINE 1
SW SW BRINGING1 SW
BSLIC1
BTEST1 VBH ATEST2
ARINGING2 SW SW SW
Battery Monitor
Le79232 Dual SLIC
Tip2
B1250T TelefuseTM
Tip
ALINE2
TISP4125H3BJ
ASLIC2
Ground Ground
FGND2
TISP4A250H3BJ
Ring
Le75282 Dual LCAS
SW SW SW
P1'
Ring2
B1250T TelefuseTM
BLINE2
BRINGING2
BSLIC2 Switch Control Logic Latch
P2' P3' LD1 LD2
BTEST2
TSD1 TSD2 OFF1 OFF2
DGND
CFG
AI-TISP4A-001-a
Figure 7. Typical Application Circuit
NOVEMBER 2006 - REVISED MAY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
Bourns Sales Offices Region The Americas: Europe: Asia-Pacific: Phone +1-951-781-5500 +41-41-7685555 +886-2-25624117 Fax +1-951-781-5700 +41-41-7685510 +886-2-25624116
Technical Assistance Region The Americas: Europe: Asia-Pacific: Phone +1-951-781-5500 +41-41-7685555 +886-2-25624117 Fax +1-951-781-5700 +41-41-7685510 +886-2-25624116
www.bourns.com
Bourns(R) products are available through an extensive network of manufacturer's representatives, agents and distributors. To obtain technical applications assistance, a quotation, or to place an order, contact a Bourns representative in your area.
"TISP" is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office. "Bourns" is a registered trademark of Bourns, Inc. in the U.S. and other countries. COPYRIGHT(c) 2007, BOURNS, INC. LITHO IN U.S.A. e 05/07 TSP0705

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